unisonic technologies co., ltd bc847bs preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r218-023.a npn general purpose amplifier ? description the utc bc847bs is a dual npn transistors; it uses utc?s advanced technology to provide customers high dc current gain, low power dissipation and low collector-emitter saturation voltage. the utc bc847bs is suitable for a high gain, low noise and general purpose amplifier. ? features * low saturation voltage * high dc current gain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 BC847BSL-AL6-R bc847bsg-al6-r sot-363 e1 b1 c2 e2 b2 c1 tape reel BC847BSL-AL6-R (1)packing type (2)package type (1) r: tape reel (2) al6: sot-363 (3) g: halogen free, l: lead free (3)halogen free ? marking 8bb 12 3 4 5 6 l: lead free g: halogen free
unisonic technologies co., ltd bc847bs preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw ver.a ? absolute maximum ratings (t a =25 c, unless otherwise noted) parameter symbol ratings unit collector-base voltage v ces 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 6.0 v continuous collector current i c 100 ma power dissipation p d 325 mw derate above 25c 2.8 mw/c junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data ( t a =25c unless otherwise noted) parameter symbol ratings unit junction to ambient ja 357 c/w ? electrical characteristics (t a =25 c, unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv ces i c =10a, i e =0 50 v collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 45 v emitter-base breakdown voltage bv ebo i e =10a, i c =0 6.0 v collector cut-off current i cbo v cb =30v 15 na v cb =30v, t a =150c 5.0 a collector-emitter satu ration voltage v ce(sat) i c =10ma, i b =0.5ma 0.25 v i c =100ma, i b =5.0ma 0.6 v base-emitter turn -on voltage v be(on) i c =2.0ma, v ce =5.0v 0.58 0.70 v i c =10ma, v ce =5.0v 0.77 v dc current gain h fe i c =2.0ma, v ce =5.0v 200 450 transition frequency f t i c =10ma, v ce =5.0v, f=100mhz 100 mhz output capacitance c obo v cb =10v, f=1.0mhz 4.5 pf noise figure nf i c =0.2ma, v ce =5.0v, r s =2.0k ? , f=1.0khz, bw=200hz 10 db
bc847bs preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-023.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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